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Einband grossLight-Induced Defects in Semiconductors
ISBN/GTIN

Light-Induced Defects in Semiconductors

E-BookPDF0 - No protectionE-Book
212 Seiten
Englisch
Taylor & Franciserschienen am13.09.2014
This book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related matemehr

Produkt

KlappentextThis book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related mate
Details
Weitere ISBN/GTIN9789814411493
ProduktartE-Book
EinbandartE-Book
FormatPDF
Format Hinweis0 - No protection
Erscheinungsjahr2014
Erscheinungsdatum13.09.2014
Seiten212 Seiten
SpracheEnglisch
Dateigrösse16913 Kbytes
Artikel-Nr.4652239
Rubriken
Genre9200

Inhalt/Kritik

Inhaltsverzeichnis
Introduction. Crystalline Semiconductors. Hydrogenated Amorphous Silicon. Hydrogenated Microcrystalline Silicon. Amorphous Chalcogenides. Appendix. Bibliography. Index.mehr

Autor

Kazuo Morigaki is professor emeritus at the University of Tokyo, Japan. He received his PhD in physics from Osaka University, Japan, in 1959. His current areas of interest are light-induced phenomena and electronic states of defects in amorphous and microcrystalline silicon.

Harumi Hikita is professor at the Physics Laboratory, Mekai University, Japan. He received his PhD in physics from Tokai University, Japan, in 1993. His current interests focus on light-induced phenomena and hydrogen motion in hydrogenated amorphous silicon.



Chisato Ogihara is associate professor at the Department of Applied Physics, Yamaguchi University, Japan. He received his PhD in physics from University of Tokyo, Japan, in 1988. His current research focuses on photoluminescence and light-induced creation of defects in hydrogenated amorphous silicon.
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