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Transistor Level Modeling for Analog/RF IC Design

BuchGebunden
294 Seiten
Englisch
Springer Netherlandserschienen am22.03.2006
Among many great inventions made in the 20th century, electronic circuits, which later evolved into integrated circuits, are probably the biggest, when considering their contribution to human society.mehr
Verfügbare Formate
BuchKartoniert, Paperback
EUR106,99
BuchGebunden
EUR114,50
E-BookPDF1 - PDF WatermarkE-Book
EUR96,29

Produkt

KlappentextAmong many great inventions made in the 20th century, electronic circuits, which later evolved into integrated circuits, are probably the biggest, when considering their contribution to human society.
Zusammenfassung
Brings together a variety of modeling techniques

Treats models as well as methods of implementation

Is a true in depth source for MOS-modelers
Details
ISBN/GTIN978-1-4020-4555-4
ProduktartBuch
EinbandartGebunden
Erscheinungsjahr2006
Erscheinungsdatum22.03.2006
Seiten294 Seiten
SpracheEnglisch
Gewicht638 g
IllustrationenXIV, 294 p.
Artikel-Nr.10737731

Inhalt/Kritik

Inhaltsverzeichnis
2/3-D process and device simulation. An effective tool for better understanding of internal behavior of semiconductor structures.- PSP: An advanced surface-potential-based MOSFET model.- EKV3.0: An advanced charge based MOS transistor model.A design-oriented MOS transistor compact model.- Modelling using high-frequency measurements.- Empirical FET models.- Modeling the SOI MOSFET nonlinearities. An empirical approach.- Circuit level RF modeling and design.- On incorporating parasitic quantum effects in classical circuit simulations.- Compact modeling of the MOSFET in VHDL-AMS.- Compact modeling in Verilog-A.mehr
Kritik
"A comprehensive book on state of the art emerging MOSFET models for the design and simulation of analog, digital or RF Integrated Circuits."
Narain Arora, Cadence Design Systems, California, USA

"This book covers modern topics in semiconductor TCAD, circuit simulation, compact models, RF modeling, etc. which are hard to find together anywhere else."
Peter Bendix, Xpedion Design Systems, California, USAmehr

Autor

Dr. Grabinski, Dr. Nauwelaers and Dr. Scheurs organized the MOS-Modeling workshop at the European Solid-State Devices Conference (ESSDERC) in 2004, and due to popular request will do again at ESSDERC 2005 in Grenoble. Dr. Grabinski is in industry, at Freescale Semiconductor, while Dr. Nauwelaers and Dr. Schreurs are in academia.
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Herausgegeben:Grabinski, Wladyslaw
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Nauwelaers, Bart