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GaN and SiC Power Devices

From Fundamentals to Applied Design and Market Analysis
BuchGebunden
264 Seiten
Englisch
Springererschienen am02.02.20241st ed. 2024
This book provides a single-source reference for any reader requiring basic and advanced information on wide bandgap semiconductors and related design topics. Focusing on practicability, it explains the principles of GaN and SiC semiconductors, manufacturing, characterization, market and design for key applications.mehr
Verfügbare Formate
BuchGebunden
EUR85,59
E-BookPDF1 - PDF WatermarkE-Book
EUR85,59

Produkt

KlappentextThis book provides a single-source reference for any reader requiring basic and advanced information on wide bandgap semiconductors and related design topics. Focusing on practicability, it explains the principles of GaN and SiC semiconductors, manufacturing, characterization, market and design for key applications.
Details
ISBN/GTIN978-3-031-50653-6
ProduktartBuch
EinbandartGebunden
Verlag
Erscheinungsjahr2024
Erscheinungsdatum02.02.2024
Auflage1st ed. 2024
Seiten264 Seiten
SpracheEnglisch
IllustrationenXV, 264 p. 47 illus., 41 illus. in color.
Artikel-Nr.55678480

Inhalt/Kritik

Inhaltsverzeichnis
Introduction.- Wide bandgap Semiconductors.- GaN overview.- SiC overview.- Electrical Characteristics.- Circuit Design with GaN and SiC.- Electric Vehicles.- Renewable Energies.- Motor Drivers.- Thermal Management.- Power Supplies.- Lidar and Space Applications.mehr

Schlagworte

Autor

Maurizio Di Paolo Emilio is Editor in Chief of Power Electronics News and EEWeb, and an EE Times correspondent. He holds a Ph.D in physics and is a telecommunications engineer. He has worked on projects concerning gravitational waves research, designing a thermal compensation system (TCS) and data acquisition and control systems, and on others about x-ray microbeams in collaboration with Columbia University and motor control for space with INFN. TCS was applied to the Virgo and LIGO experiments, which detected gravitational waves for the first time and earned the Nobel Prize in 2017.