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Advanced Physical Models for Silicon Device Simulation

BuchGebunden
Englisch
Springer Wienerschienen am07.07.19981998
Device simulation has two main purposes: to understand and depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of an anticipated new device generation.mehr
Verfügbare Formate
BuchGebunden
EUR160,49
BuchKartoniert, Paperback
EUR160,49
E-BookPDF1 - PDF WatermarkE-Book
EUR149,79

Produkt

KlappentextDevice simulation has two main purposes: to understand and depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of an anticipated new device generation.
Zusammenfassung
Excellent overview about the most widely used models

Discussion of accuracy and application results

Comparison of theory and experimental data
Details
ISBN/GTIN978-3-211-83052-9
ProduktartBuch
EinbandartGebunden
ErscheinungsortVienna
Erscheinungsjahr1998
Erscheinungsdatum07.07.1998
Auflage1998
ReiheComputational Microelectronics
SpracheEnglisch
IllustrationenXVIII, 354 p.
Artikel-Nr.11910493

Inhalt/Kritik

Inhaltsverzeichnis
1 Simulation of Silicon Devices: An Overview.- 1.1 Transport Models.- 1.2 Review of Physical Models for Drift-Diffusion Equations.- 1.3 Simulation Example: Gated Diode.- References.- 2 Mobility Model for Hydrodynamic Transport Equations.- 2.1 Analytical Model of the Electron Mobility.- 2.2 Parameter Fit and Comparison with Experimental Data.- 2.3 Hole Mobility.- 2.4 Simulation Results.- References.- 3 Advanced Generation-Recombination Models.- 3.1 Band-to-Band Tunneling.- 3.2 Defect-Assisted Tunneling.- 3.3 Numerical Simulation of Tunnel Generation Currents.- 3.4 Coupled Defect-Level Recombination.- References.- 4 Metal-Semiconductor Contact.- 4.1 Emission Current Through a Parabolic Barrier.- 4.2 Interpolation Scheme for the Transmission Probability.- 4.3 Analytical Model of the Contact Current.- 4.4 Boundary Conditions for Device Simulation.- 4.5 Comparison with Measurements.- 4.6 Results of Numerical Simulation.- References.- 5 Modeling Transport Across Thin Dielectric Barriers.- 5.1 One-Step Tunneling.- 5.2 Two-Step Multiphonon-Assisted Tunneling.- 5.3 Resonant Tunneling.- 5.4 Comparison of Two-Step Zero-Phonon Tunneling and Resonant Tunneling.- 5.5 Simulation of the Long-Term Charge Loss in EPROMs.- References.- 6 Summary and Outlook.- References.- Appendices.- B Evaluation of a Double Integral.- C Transmission Probability for a Parabolic Barrier.- D Asymptotic Forms and Interpolation of Cylinder Functions.- E Energy Limit for Gaussian Approximation.- G Probability of Resonant Tunneling.- References.- List of Figures.- List of Tables.mehr

Schlagworte