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Semiconductor Power Devices

Physics, Characteristics, Reliability
BuchGebunden
714 Seiten
Englisch
Springererschienen am28.02.20182. Aufl.
This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology.mehr
Verfügbare Formate
BuchKartoniert, Paperback
EUR139,09
BuchGebunden
EUR299,59
BuchKartoniert, Paperback
EUR213,99
E-BookPDF1 - PDF WatermarkE-Book
EUR128,39
E-BookPDF1 - PDF WatermarkE-Book
EUR213,99

Produkt

KlappentextThis book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology.
Zusammenfassung
Describes structure, characteristics and technical features of specific power devices

Includes sections on packaging and reliability

Uniquely deals with the effects of emitters
Details
ISBN/GTIN978-3-319-70916-1
ProduktartBuch
EinbandartGebunden
Verlag
Erscheinungsjahr2018
Erscheinungsdatum28.02.2018
Auflage2. Aufl.
Seiten714 Seiten
SpracheEnglisch
Gewicht1264 g
IllustrationenXIX, 714 p. 480 illus., 132 illus. in color.
Artikel-Nr.43806461

Inhalt/Kritik

Inhaltsverzeichnis
Power Semiconductor Devices - Key Components for Efficient Electrical Energy Conversion Systems.- Semiconductor Properties.- pn-Junctions.- Short Introduction to Power Device Technology.- pin-Diodes.- Schottky Diodes.- Bipolar Transistors.- Thyristors.- MOS Transistors.- IGBTs.- Packaging and Reliability of Power Devices.- Destructive Mechanisms in Power Devices.- Power Device-Induced Oscillations and Electromagnetic Disturbances.- Power Electronic System Integration.mehr

Autor

Josef Lutz studied Physics at the University of Stuttgart. He invented the Controlled Axial Lifetime (CAL) diode and holds several patents. In 1999 he graduated as Ph.D in electrical engineering at the University of Ilmenau. Since August 2001 he is a Professor for Power Electronics and Electromagnetic Compatibility at TU Chemnitz, Germany. He is the consulting Director of the PCIM, member of four international Program Committees and member of the Editorial Advisory Board of Microelectronics Reliability. He was awarded with the degree of Honorable Professor by the North Caucasus State University Stavropol, Russia, in 2005.

Heinrich Schlangenotto received the Ph.D. degree in theoretical physics at the University of Münster. In 1966 he joined the Research Institute of AEG-Telefunken in Frankfurt which in 1988 passes to Daimler-Benz. Working on the physics underlying the operation modes of semiconductor power devices, he improved the description of forward conduction based on a new insight in the spatial distribution of recombination. Investigating the injection and temperature dependence of radiative recombination, which is used in analysing device operation, he finds an important participation of excitons even near room temperature. To improve the dynamic behaviour of rectifier diodes he invented the fast, soft recovery SPEED-diode. He gave the first quantitative description of the dynamical avalanche mechanism limiting fast switching. From 1991 to 2001 he held a lecture on power devices at the TU Darmstadt, Germany.
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