Hugendubel.info - Die B2B Online-Buchhandlung 

Merkliste
Die Merkliste ist leer.
Bitte warten - die Druckansicht der Seite wird vorbereitet.
Der Druckdialog öffnet sich, sobald die Seite vollständig geladen wurde.
Sollte die Druckvorschau unvollständig sein, bitte schliessen und "Erneut drucken" wählen.

Optical Characterization of Epitaxial Semiconductor Layers

BuchKartoniert, Paperback
429 Seiten
Englisch
Springererschienen am14.12.2011Softcover reprint of the original 1st ed. 1996
The characterization of epitaxial layers and their surfaces has benefitted a lot from the enormous progress of optical analysis techniques during the last decade.mehr
Verfügbare Formate
BuchKartoniert, Paperback
EUR53,49
E-BookPDF1 - PDF WatermarkE-Book
EUR53,49

Produkt

KlappentextThe characterization of epitaxial layers and their surfaces has benefitted a lot from the enormous progress of optical analysis techniques during the last decade.
Details
ISBN/GTIN978-3-642-79680-7
ProduktartBuch
EinbandartKartoniert, Paperback
Verlag
Erscheinungsjahr2011
Erscheinungsdatum14.12.2011
AuflageSoftcover reprint of the original 1st ed. 1996
Seiten429 Seiten
SpracheEnglisch
Gewicht679 g
IllustrationenXVI, 429 p.
Artikel-Nr.18228051

Inhalt/Kritik

Inhaltsverzeichnis
1 Introduction.- 2 Analysis of Epitaxial Growth.- 2.1 Vapour Phase Epitaxy: Basics.- 2.2 Gas Phase Diagnostics: Transport.- 2.3 Gas Phase Diagnostics: Reaction Kinetics.- 2.4 Surface Diagnostics.- 2.5 Conclusions.- 3 Spectroscopic Ellipsometry.- 3.1 Principle of Measurement.- 3.2 Experimental Details.- 3.3 Interpretation of the Effective Dielectric Function.- 3.4 Characteristic Experimental Examples.- 3.5 Sample Related Problems.- 3.6 Summary.- 4 Raman Spectroscopy.- 4.1 Theory of Raman Spectroscopy.- 4.2 Experimental Setup for Raman Scattering.- 4.3 Analysis of Lattice Dynamical Properties.- 4.4 Analysis of Electronic Properties.- 4.5 Band Bending at Interfaces.- 4.6 Summary.- 5 Far-Infrared Spectroscopy.- 5.1 Theoretical Foundations.- 5.2 Fourier Transform Spectroscopy.- 5.3 Determination of Layer Thicknesses.- 5.4 Determination of Carrier Concentrations.- 5.5 Confined Electron Systems.- 5.6 Determination of Impurity Concentrations.- 5.7 Shallow Donors and Acceptors.- 5.8 IR Characterisation of Porous Silicon Layers.- 5.9 Summary.- 6 High Resolution X-Ray Diffraction.- 6.1 Principal Scattering Geometries.- 6.2 Kinematical and Dynamical Theory.- 6.3 Thickness Dependence of Bragg Reflections.- 6.4 Strain Phenomena.- 6.5 Rocking-Curves from Heterostructures.- 6.6 Multilayer Structures.- 6.7 Scans in the Reciprocal Lattice.- 6.8 New Developments.- 6.9 Grazing-Incidence X-Ray Techniques.- 6.10 Reflection of X-Rays at Grazing Incidence.- 6.11 Specular and Non-Specular Scattering.- 6.12 Grazing-Incidence X-Ray Diffraction.- 6.13 Summary.- 6.14 Concluding Remarks.- References.mehr

Autor