Hugendubel.info - Die B2B Online-Buchhandlung 

Merkliste
Die Merkliste ist leer.
Bitte warten - die Druckansicht der Seite wird vorbereitet.
Der Druckdialog öffnet sich, sobald die Seite vollständig geladen wurde.
Sollte die Druckvorschau unvollständig sein, bitte schliessen und "Erneut drucken" wählen.
BuchKartoniert, Paperback
248 Seiten
Englisch
Springererschienen am19.09.2011Softcover reprint of the original 1st ed. 1990
In recent years the mathematical modeling of charge transport in semi­ conductors has become a thriving area in applied mathematics. The drift diffusion equations, which constitute the most popular model for the simula­ tion of the electrical behavior of semiconductor devices, are by now mathe­ matically quite well understood. As a consequence numerical methods have been developed, which allow for reasonably efficient computer simulations in many cases of practical relevance. Nowadays, research on the drift diffu­ sion model is of a highly specialized nature. It concentrates on the explora­ tion of possibly more efficient discretization methods (e.g. mixed finite elements, streamline diffusion), on the improvement of the performance of nonlinear iteration and linear equation solvers, and on three dimensional applications. The ongoing miniaturization of semiconductor devices has prompted a shift of the focus of the modeling research lately, since the drift diffusion model does not account well for charge transport in ultra integrated devices. Extensions of the drift diffusion model (so called hydrodynamic models) are under investigation for the modeling of hot electron effects in submicron MOS-transistors, and supercomputer technology has made it possible to employ kinetic models (semiclassical Boltzmann-Poisson and Wigner­ Poisson equations) for the simulation of certain highly integrated devices.mehr
Verfügbare Formate
BuchGebunden
EUR106,99
BuchKartoniert, Paperback
EUR106,99
E-BookPDF1 - PDF WatermarkE-Book
EUR96,29

Produkt

KlappentextIn recent years the mathematical modeling of charge transport in semi­ conductors has become a thriving area in applied mathematics. The drift diffusion equations, which constitute the most popular model for the simula­ tion of the electrical behavior of semiconductor devices, are by now mathe­ matically quite well understood. As a consequence numerical methods have been developed, which allow for reasonably efficient computer simulations in many cases of practical relevance. Nowadays, research on the drift diffu­ sion model is of a highly specialized nature. It concentrates on the explora­ tion of possibly more efficient discretization methods (e.g. mixed finite elements, streamline diffusion), on the improvement of the performance of nonlinear iteration and linear equation solvers, and on three dimensional applications. The ongoing miniaturization of semiconductor devices has prompted a shift of the focus of the modeling research lately, since the drift diffusion model does not account well for charge transport in ultra integrated devices. Extensions of the drift diffusion model (so called hydrodynamic models) are under investigation for the modeling of hot electron effects in submicron MOS-transistors, and supercomputer technology has made it possible to employ kinetic models (semiclassical Boltzmann-Poisson and Wigner­ Poisson equations) for the simulation of certain highly integrated devices.
Details
ISBN/GTIN978-3-7091-7452-4
ProduktartBuch
EinbandartKartoniert, Paperback
Verlag
Erscheinungsjahr2011
Erscheinungsdatum19.09.2011
AuflageSoftcover reprint of the original 1st ed. 1990
Seiten248 Seiten
SpracheEnglisch
Gewicht410 g
IllustrationenX, 248 p.
Artikel-Nr.29950358

Inhalt/Kritik

Inhaltsverzeichnis
1 Kinetic Transport Models for Semiconductors.- 1.1 Introduction.- 1.2 The (Semi-)Classical Liouville Equation.- 1.3 The Boltzmann Equation.- 1.4 The Quantum Liouville Equation.- 1.5 The Quantum Boltzmann Equation.- 1.6 Applications and Extensions.- Problems.- References.- 2 From Kinetic to Fluid Dynamical Models.- 2.1 Introduction.- 2.2 Small Mean Free Path-The Hilbert Expansion.- 2.3 Moment Methods-The Hydrodynamic Model.- 2.4 Heavy Doping Effects-Fermi-Dirac Distributions.- 2.5 High Field Effects-Mobility Models.- 2.6 Recombination-Generation Models.- Problems.- References.- 3 The Drift Diffusion Equations.- 3.1 Introduction.- 3.2 The Stationary Drift Diffusion Equations.- 3.3 Existence and Uniqueness for the Stationary Drift Diffusion Equations.- 3.4 Forward Biased P-N Junctions.- 3.5 Reverse Biased P-N Junctions.- 3.6 Stability and Conditioning for the Stationary Problem.- 3.7 The Transient Problem.- 3.8 The Linearization of the Transient Problem.- 3.9 Existence for the NonlinearProblem.- 3.10 Asymptotic Expansions on the Diffusion Time Scale.- 3.11 Fast Time Scale Expansions.- Problems.- References.- 4 Devices.- 4.1 Introduction.- 4.2 P-N Diode.- 4.3 Bipolar Transistor.- 4.4 PIN-Diode.- 4.5 Thyristor.- 4.6 MIS Diode.- 4.7 MOSFET.- 4.8 Gunn Diode.- Problems.- References.- Physical Constants.- Properties of Si at Room Temperature.mehr

Schlagworte