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Mathematical Modelling and Simulation of Electrical Circuits and Semiconductor Devices

Proceedings of a Conference held at the Mathematisches Forschungsinstitut, Oberwolfach, July 5 - 11, 1992
BuchGebunden
316 Seiten
Englisch
Springererschienen am31.12.1994
Progress in the high-technology industries is strongly associated with the development of the mathematical tools. A typical illustration of this partnership is the mathematical modelling and numerical simulation of electric circuits and semiconductor devices. This title covers electric circuit simulation, device simulation and process simulation.mehr
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EUR115,56
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Produkt

KlappentextProgress in the high-technology industries is strongly associated with the development of the mathematical tools. A typical illustration of this partnership is the mathematical modelling and numerical simulation of electric circuits and semiconductor devices. This title covers electric circuit simulation, device simulation and process simulation.

Inhalt/Kritik

Inhaltsverzeichnis
Part 1 Circuit simulation: a new efficient numerical integration scheme for highly oscillatory electric circuits, G. Denk; Numerische Losung von hierarchisch strukturierten Systemen von Algebro-Differentialgleichungen, F. Grund; partitioning and multirate strategies in latent electric circuits, M. Gunther, P. Rentrop; circuit simulation - an application for parallel ODE solvers?, M. Kiehl; numerical stability criteria for differential-algebraic systems, R. Marz; analysis of linear time-invariant networks in the frequency domain, W. Mathis; limit cycle computation of oscillating electric circuits, W. Schmidt; timestep control for charge conserving integration in circuit simulation, E.-R Sieber, U. Feldmann, R. Schultz, H. Wriedt; Ein Zusammenhang zwischen Waveformrelaxation und Iterationsverfahren fur nichtlinear gestorte Gleichungen, K. Taubert; Multilevel-Newton-Verfahren in der Transientenanalyse elektrischer Netzwerke, W. Wiedl; Transientensimulation elektrischer Netwerke mit TRBDF, H. Wriedt; the transient behaviour of an oscillator, Q. Zheng. Part 2 Device simulation: numerical simulation of the carrier transport in semiconductor devices on the base of an energy model, G. Albinus; on uniqueness of solutions to the drift diffusion-model of semiconductor devices, H. Gajewski; on restrictions for discretizations of the simplified linearized van Roosbroeck's equations, K. Gartner; mixed finite element discretization of continuity equations arising in semiconductor device simulation, R. Hiptmair, R.H. W. Hoppe; a piecewise linear Petrov-Galerkin analysis of the box-method, T. Kerkhoven; stability analysis of thermocapillary convection in semiconductor crystal growth, H.D. Mittelmann, K.-T Chang, D. F. Jankowski, G. P. Neitzel; the method of Baliga-Patankar and 3-D device simulation, F. Montrone; a mass conserving moving grid method for dopant simulation, M. Paffrath; numerical approaches to the kinetic semiconductor equations, J. Wick; the non-stationary semiconductor model with bounded convective velocity and generation/recombination term, D. Wrzosek.mehr